Smd Transistor

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Product BrochureProduct Details:

The FMMT619TA is a part manufactured by Diodes Incorporated, and it is a NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplifier and switching applications. Below are its key details:

Key Specifications:

• Type: NPN Bipolar Transistor
• Package Type: SOT-23
• Maximum Collector Current (Ic): 800 mA
• Maximum Collector-Emitter Voltage (Vce): 60 V
• Maximum Power Dissipation (Pd): 625 mW
• DC Current Gain (hFE): 100 to 300 (depending on operating conditions)
• Transition Frequency (fT): Typically 100 MHz
• Configuration: Single

Applications:

• Signal amplification
• Small signal switching
• Driving low-current loads
• General-purpose circuits in portable and compact designs

If you have a specific application or need additional parameters, let me know!

Approx. Rs 200 / PieceGet Latest Price

Product BrochureProduct Details:

The K3714 (2SK3714) is an N-channel powerTRANSISTOR manufactured by  NEC (now part of Renesas Electronics). Here are its key specifications:

 

Key Specifications:

• Type: N-Channel Power MOSFET
• Voltage Rating (VDSS): 900V
• Current Rating (ID): 5A
• Drain-Source On-Resistance (RDS(on)): ~2.5Ω
• Power Dissipation (PD): 100W
• Gate Threshold Voltage (VGS(th)): 3-5V
• Package: TO-3P (power package for high-voltage applications)

Features:

• High-voltage capability (900V)
• Suitable for switch-mode power supplies (SMPS)
• Low gate charge for efficient switching
• High power dissipation capacity

Applications:

• Power supplies (SMPS) and adapters
• High-voltage converters
• Industrial power systems
• Lighting ballast circuits

Would you like the datasheet or recommendations on where to buy this MOSFET?

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Product BrochureProduct Details:

The FMMT619TA is a low-saturation NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for applications that require high-speed switching, high current handling, and low saturation voltage for efficient operation.

Key Specifications:

1. Electrical Characteristics:

   • Collector-Emitter Voltage (Vceo): 20 V.
   • Collector-Base Voltage (Vcbo): 30 V.
   • Emitter-Base Voltage (Vebo): 5 V.
   • Collector Current (Ic): 3 A (continuous), with high peak current capabilities.

2. Performance:

   • Gain (hFE): 100 to 250 (at 1 A and Vce = 2 V).
   • Saturation Voltage (Vce(sat)): Typically 50 mV at 1 A, ensuring minimal power loss.
   • Transition Frequency (fT): 190 MHz (typical), supporting high-speed operations.

3. Power Dissipation:

   • Ptot: 1.4 W (at 25°C ambient temperature).

4. Switching Speed:

   • Designed for fast switching applications with minimal delay.

Package Details:

1. Package Type:

   • SOT-23: A compact surface-mount package suitable for space-constrained designs.

2. Dimensions:

   • Body Length: ~2.9 mm.
   • Body Width: ~1.3 mm.
   • Pin Pitch: ~0.95 mm.

3. Material Composition:

   • Encapsulation: Epoxy-based resin for mechanical and environmental protection.
   • Leads: Copper alloy with a tin finish for solderability.

Features:

• Low Saturation Voltage: Minimizes power losses, making it ideal for battery-powered and low-power systems.
• High Current Capability: Handles up to 3 A of collector current, suitable for driving loads.
• Compact SMD Design: Fits into space-constrained PCB layouts.
• High-Speed Switching: Makes it suitable for high-frequency DC-DC converters and pulse-width modulation (PWM) circuits.

Applications:

• Power management in portable devices.
• Load switching and motor driving.
• DC-DC converters and voltage regulators.
• LED driving and other general-purpose switching.

Alternatives and Equivalents:

• Zetex ZTX619: Similar specifications but in different packages.
• BC817 Series: Could be a potential alternative, depending on the specific requirements.

Would you like more information on application circuits, sourcing options, or simulation models for the FMMT619TA?

Approx. Rs 90 / PieceGet Latest Price

Product BrochureProduct Details:

he BCV61 is an NPN general-purpose double transistor originally produced by Philips Semiconductors, now part of NXP Semiconductors.oused in a compact SOT143B surface-mounted package, it contains two transistors with closely matched characteristics, making it suitable for applications requiring thermal stability and precise current matching.citeturn0search1 Key Features:

• Low Current: aximum collector current of 100 mA per transistor.- Low Voltage: aximum collector-emitter voltage of 30 V.- Matched Pair: ransistors are matched for consistent performance. Applications:

• urrent mirrors.- ircuits where the operating point must remain stable across temperature variations. Absolute Maximum Ratings (per transistor):

• Collector-Base Voltage (VCBO): 0 V- Collector-Emitter Voltage (VCEO): 0 V- Emitter-Base Voltage (VEBO): V- Collector Current (IC): 00 mA- Total Power Dissipation (Ptot): 50 mW (at Tamb ≤ 25°C)- Junction Temperature (Tj): 50°C- Storage Temperature (Tstg): 65°C to +150°C or detailed electrical characteristics and application guidelines, please refer to the official datasheet available from NXP Semiconductors.citeturn0search1 f you're looking to purchase the BCV61, it's available through various electronic component distributors, including Digi-Key.citeturn0search3