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Smd Transistor

Importer of a wide range of products which include fmmt619ta diodes incorporated bipolar transistor, fmmt619ta diodes transistors, k3714 nec transistor, ts4141 infineon transistor, bcv61 philips trnsistor and 2sa1736 toshiba sot89.

Fmmt619ta Diodes Incorporated Bipolar Transistor

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Fmmt619ta   Diodes Incorporated   Bipolar  Transistor
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  • Fmmt619ta   Diodes Incorporated   Bipolar  Transistor
  • Fmmt619ta   Diodes Incorporated   Bipolar  Transistor
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Product Details:
BrandDiodes Incorporated
Part NumberFMMT619TA
Mounting TypeSMD
Pin Count3 PIN
PACKAGESOT23

The FMMT619TA is a part manufactured by Diodes Incorporated, and it is a NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplifier and switching applications. Below are its key details:

Key Specifications:
  • Type: NPN Bipolar Transistor
  • Package Type: SOT-23
  • Maximum Collector Current (Ic): 800 mA
  • Maximum Collector-Emitter Voltage (Vce): 60 V
  • Maximum Power Dissipation (Pd): 625 mW
  • DC Current Gain (hFE): 100 to 300 (depending on operating conditions)
  • Transition Frequency (fT): Typically 100 MHz
  • Configuration: Single
Applications:
  • Signal amplification
  • Small signal switching
  • Driving low-current loads
  • General-purpose circuits in portable and compact designs

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FMMT619TA DIODES TRANSISTORS

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FMMT619TA  DIODES   TRANSISTORS
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Product Details:
Mounting TypeSMD
BrandDIODES Incorporated
Part NumberFMMT619TA
Pin Count3 PIN
PackageSOT-23

The FMMT619TA is a low-saturation NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for applications that require high-speed switching, high current handling, and low saturation voltage for efficient operation.

Key Specifications:
  1. Electrical Characteristics:

    • Collector-Emitter Voltage (Vceo): 20 V.
    • Collector-Base Voltage (Vcbo): 30 V.
    • Emitter-Base Voltage (Vebo): 5 V.
    • Collector Current (Ic): 3 A (continuous), with high peak current capabilities.
  2. Performance:

    • Gain (hFE): 100 to 250 (at 1 A and Vce = 2 V).
    • Saturation Voltage (Vce(sat)): Typically 50 mV at 1 A, ensuring minimal power loss.
    • Transition Frequency (fT): 190 MHz (typical), supporting high-speed operations.
  3. Power Dissipation:

    • Ptot: 1.4 W (at 25°C ambient temperature).
  4. Switching Speed:

    • Designed for fast switching applications with minimal delay.
Package Details:
  1. Package Type:

    • SOT-23: A compact surface-mount package suitable for space-constrained designs.
  2. Dimensions:

    • Body Length: ~2.9 mm.
    • Body Width: ~1.3 mm.
    • Pin Pitch: ~0.95 mm.
  3. Material Composition:

    • Encapsulation: Epoxy-based resin for mechanical and environmental protection.
    • Leads: Copper alloy with a tin finish for solderability.
Features:
  • Low Saturation Voltage: Minimizes power losses, making it ideal for battery-powered and low-power systems.
  • High Current Capability: Handles up to 3 A of collector current, suitable for driving loads.
  • Compact SMD Design: Fits into space-constrained PCB layouts.
  • High-Speed Switching: Makes it suitable for high-frequency DC-DC converters and pulse-width modulation (PWM) circuits.
Applications:
  • Power management in portable devices.
  • Load switching and motor driving.
  • DC-DC converters and voltage regulators.
  • LED driving and other general-purpose switching.
Alternatives and Equivalents:
  • Zetex ZTX619: Similar specifications but in different packages.
  • BC817 Series: Could be a potential alternative, depending on the specific requirements.

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K3714 NEC TRANSISTOR

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Product Details:
Current5 A
Transistor PolarityNPN
Mounting TypeDIP
BrandNEC
Part NumberK3714
PACKAGEIsolated TO-220

The K3714 (2SK3714) is an N-channel powerTRANSISTOR manufactured by  NEC (now part of Renesas Electronics). Here are its key specifications:

 

Key Specifications:
  • Type: N-Channel Power MOSFET
  • Voltage Rating (VDSS): 900V
  • Current Rating (ID): 5A
  • Drain-Source On-Resistance (RDS(on)): ~2.5Ω
  • Power Dissipation (PD): 100W
  • Gate Threshold Voltage (VGS(th)): 3-5V
  • Package: TO-3P (power package for high-voltage applications)
Features:
  • High-voltage capability (900V)
  • Suitable for switch-mode power supplies (SMPS)
  • Low gate charge for efficient switching
  • High power dissipation capacity
Applications:
  • Power supplies (SMPS) and adapters
  • High-voltage converters
  • Industrial power systems
  • Lighting ballast circuits

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TS4141 INFINEON TRANSISTOR

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TS4141    INFINEON   TRANSISTOR
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Product Details:
Mounting TypeSMD
BrandINFINEON
Part NumberTS4141
Pin Count4 PINS
COLOURBLACK

The TS4141 (also seen as ITS4141N or sometimes BTS4141N) from Infineon is not a simple transistor—it's a smart high‑side power switch designed for industrial and automotive applications. Here's a detailed breakdown:

⚙️ Core Functionality
  • Integrated vertical N‑channel MOSFET, optimized for high‑side power switching 

  • Contains on-chip protection: short‑circuit and overcurrent limiting, thermal shutdown with automatic restart, undervoltage and overvoltage protection, reverse-battery and loss-of-ground detection Logic-level, CMOS‑compatible input, making it easy to drive from microcontrollers Includes internal bootstrap diode for gate driver operation 

📊 Key Specifications
  • Single-channel high-side switch, with up to 700 mA continuous current and 1.4 A current limit On-resistance: typically ≤ 200 mΩ, minimizing voltage drop and power loss Switching speeds: on-time under 100 µs, allowing fast load control 

  • Package: SOT‑223, suitable for PCB mounting in power applications 

  • Temperature rating: up to 150 °C, ideal for automotive and harsh environments EMC-friendly design, with ESD protection and load‑dump endurance 

🛠️ Practical Applications

Ideal for switching various loads up to 700 mA, including:

  • Automotive systems (lighting, actuators)

  • Industrial controls

  • Power supplies

  • AC/DC automotive adaptors

  • Replacing mechanical relays in embedded and microcontroller-based circuits

📌 Summary Table
Feature Value
Type Smart High‑Side Switch (1 channel)
Max Load Current 700 mA (1.4 A current limit)
On‑Resistance ≤ 200 mΩ
On/Off Switching Time ≤ 100 µs
Protection Short‑circuit, thermal, under/over‑voltage, etc.
Input CMOS/µC‑compatible
Package SOT‑223
Temp Range Up to 150 °C
✅ Why use TS4141?
  • Safety & robustness: Built-in protections eliminate need for external circuitry.

  • Simplicity & space-efficiency: One-chip solution with compact package.

  • Performance: Low loss and fast switching, suitable for high-temperature environments.

📝 Notes & Variants
  • Nomenclature:

    • TS4141 = general part number

    • ITS4141N, BTS4141N = Infineon-specific variants, typically with automotive-grade specs

  • Widely stocked by distributors like Mouser and Censtry 

In short: The TS4141 is a rugged, smart high-side switch ideal for efficient, safe control of 12 V/24 V loads in automotive/industrial systems. Let me know if you'd like circuit examples, footprint advice, or alternatives!

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BCV61 PHILIPS TRNSISTOR

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BCV61  PHILIPS  TRNSISTOR
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Product Brochure
Product Details:
Voltage30 V
Transistor TypeNPN
Mounting TypeSMD
BrandPHILIPS
Part NumberBCV61
COLOURBLACK
PACKAGESOD143

he BCV61 is an NPN general-purpose double transistor originally produced by Philips Semiconductors, now part of NXP Semiconductors.oused in a compact SOT143B surface-mounted package, it contains two transistors with closely matched characteristics, making it suitable for applications requiring thermal stability and precise current matching.citeturn0search1 Key Features:

  • Low Current: aximum collector current of 100 mA per transistor.- Low Voltage: aximum collector-emitter voltage of 30 V.- Matched Pair: ransistors are matched for consistent performance. Applications:

  • urrent mirrors.- ircuits where the operating point must remain stable across temperature variations. Absolute Maximum Ratings (per transistor):

  • Collector-Base Voltage (VCBO): 0 V- Collector-Emitter Voltage (VCEO): 0 V- Emitter-Base Voltage (VEBO): V- Collector Current (IC): 00 mA- Total Power Dissipation (Ptot): 50 mW (at Tamb ≤ 25°C)- Junction Temperature (Tj): 50°C- Storage Temperature (Tstg): 65°C to +150°C or detailed electrical characteristics and application guidelines, please refer to the official datasheet available from NXP Semiconductors.citeturn0search1 f you're looking to purchase the BCV61, it's available through various electronic component distributors, including Digi-Key.citeturn0search3

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2SA1736 TOSHIBA SOT89

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2SA1736   TOSHIBA    SOT89
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Product Brochure
Product Details:
Voltage50 V
Transistor TypePNP
Mounting TypeSMD
BrandTOSHIBA
Part Number2SA1736
PACKAGESOT89

Here is the detailed overview of the 2SA1736 transistor from Toshiba:

🔹 2SA1736 – Toshiba PNP Transistor Overview
Parameter Details
Part Number 2SA1736
Manufacturer Toshiba
Polarity PNP
Package Type SOT-89 (Surface Mount)
Collector-Emitter Voltage (VCEO) –50 V
Collector-Base Voltage (VCBO) –60 V
Emitter-Base Voltage (VEBO) –5 V
Collector Current (IC) –1.5 A
Power Dissipation (PC) 1.0 W (at Ta = 25°C)
DC Current Gain (hFE) 100 to 320 (at VCE = –2 V, IC = –500 mA)
Transition Frequency (fT) 180 MHz (typ.)
Saturation Voltage (VCE(sat)) –0.3 V (typ. at IC = –500 mA)
🔸 Features
  • High current capability in a compact SOT-89 package

  • Low collector-emitter saturation voltage

  • Suitable for general-purpose amplification and switching

  • High-speed switching

🔸 Typical Applications
  • General-purpose amplifier

  • Low-frequency switching

  • Driver circuits

  • Audio signal processing

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