Power Modules

Approx. Rs 2,500 / PieceGet Latest Price

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The HAS 400-S is a current transducer from LEM designed for accurate measurement of AC and DC currents up to 400 A. It utilizes open-loop Hall effect technology to provide an instantaneous voltage output proportional to the measured current. citeturn0search0

Key Specifications:

• Nominal Current (IPN): 400 A RMS
• Measurement Range: Up to 600 A
• Supply Voltage: ±15 V
• Output Voltage: ±4 V
• Bandwidth: DC to 50 kHz
• Linearity: ±1%
• Response Time: 3 µs
• Operating Temperature Range: -10°C to +80°C

The transducer features a compact design suitable for panel mounting and includes an aperture for primary conductor insertion. Its high bandwidth and fast response time make it ideal for applications requiring precise current monitoring. citeturn0search0

For detailed technical information, you can refer to the datasheet available on LEM's official website. citeturn0search0

If you're interested in purchasing the HAS 400-S, it's available through various distributors. For instance, you can find pricing and availability on Digi-Key. citeturn0search6

Please ensure that the HAS 400-S meets your specific application requirements by consulting the detailed datasheet and, if necessary, contacting LEM or authorized distributors for further assistance.

Approx. Rs 400 / PieceGet Latest Price

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The IXGH30N60B3D1 is an IGBT (Insulated Gate Bipolar Transistor) from IXYS (now part of Littelfuse). Here are its key specifications:

IXGH30N60B3D1 Specifications:

• Voltage Rating (Vce): 600V
• Current Rating (Ic): 60A
• Pulsed Current (Icm): 180A
• Gate Charge (Qg): 100nC
• Vce(sat) (Collector-Emitter Saturation Voltage): ~2.1V
• Switching Speed: Optimized for high-speed switching
• Package: TO-247
• Technology: Trench IGBT with low Vce(sat)
• Integrated Freewheeling Diode: Yes

This IGBT is ideal for high-frequency switching applications, such as inverters, motor drives, and power supplies.

Would you like a datasheet or comparison with another IGBT?

Approx. Rs 10,000 / PieceGet Latest Price

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Here are detailed specs, considerations and advice for the 7MBP100VFN060‑50 (by Fuji Electric) IGBT Module:

✅ Key Specifications

• This is an IPM (Intelligent Power Module) rated for 600 V collector-emitter voltage (V_CES) and 100 A inverter current (IC) in its inverter section. 

• It belongs to Fuji’s “V-series (6th generation)” IPM family. 

• Some important data from the datasheet:

  • Saturated collector-emitter voltage V_CE(sat) for the IGBT: approx 1.25 V typ. at 100 A.

  • Maximum junction temperature T_j = 150 °C. 

  • Case temperature operating range T_c = –20 to +110 °C. 

  • Thermal resistance (junction to case) for IGBT device: R_th(j-c) ≈ 0.99 °C/W (for inverter section) at T_c=25 °C. 

• The physical package is P636, size approximately width = 55 mm, length = 90 mm, and mass ~190 g. 

• Integrated features: over-temperature protection, under-voltage lock-out, over-current protection, built-in driver. 

🛠 Application & Use-Case Notes

• This module is suitable for inverter drives, servo drives, industrial motor drives, UPS systems and other medium-power switching applications where 600 V/100 A class modules are required. The datasheet mentions “Air Conditioner, NC/Servos, Inverters” as target applications. (

• Since it’s an IPM, you get a lot of built-in protection and gate driver convenience (which reduces external gate driver component count).

• When using this module ensure you respect thermal management (heatsink, mounting torque, interface material) and layout considerations to maintain low junction temperature and reliable operation.

• Pay attention to switching losses, layout inductance, proper snubber/clamp design if your switching frequency is high, since even though the module is designed for high performance the losses still matter.

⚠️ Things to Check / Consider

• Although rated 100 A, ensure that your actual usage (duty cycle, ambient temperature, cooling, case temperature) allows that current. Modules often have derated current depending on T_c or ambient conditions.

• The datasheet gives “Collector Power Dissipation” for the inverter section as 403 W under specific conditions (T_c=25 °C) for this part. In real use with higher T_c you’ll get less.

• Thermal interface: The R_th(j-c) is low (~0.99 °C/W) but only if mounting and cooling are done correctly. Poor mounting or insufficient heatsink will raise junction temperature quickly.

• Gate‐drive supply: The module requires correct V_CC (≈15 V nominal) for the driver circuit. Under-voltage or mis-drive may lead to increased losses or reliability issues. 

• Package layout: Make sure the mechanical mounting and screw torque are followed. The datasheet mentions screw torque M4 = 1.7 Nm typical. 

• Ensure that the module’s safe operating area (SOA), switching frequency limitations, di/dt, etc are acceptable for your specific application. The datasheet shows switching losses, SOA curves. 

📋 Summary

The 7MBP100VFN060-50 is a high-performance 600 V / 100 A class IPM module from Fuji Electric with built-in driver/ protection, suitable for demanding inverter applications. Its performance depends strongly on cooling, layout and drive conditions. If used properly it can give reliable service; however you must ensure your design respects the thermal, mounting and driver specifications.

Approx. Rs 5,250 / PieceGet Latest Price

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Here’s a summary of the available information on the module SKIIP 25AC12T4V1 (from SEMIKRON Danfoss) and what to check/verify — note: I did not find a complete official datasheet for exactly “25AC12T4V1”, so some details are drawn from very similar variants and typical family specs.

✅ What we do know

• The “25AC12T4V” family (like SKIIP 25AC12T4V25) is a 1200 V IGBT module, in the MiniSKiiP® 2 package.

• From the datasheet of “SKIIP 25AC12T4V1”:

  • VCES (max collector-emitter off voltage) is 1200 V. 

  • Nominal current ICnom ~50 A. 

  • At Tj = 175 °C, Ts=25 °C (solder temperature) the IC limit is ~69 A; at Ts=70 °C it is ~56 A.

  • For the inverse diode: IF at Tj=175 °C is ~60 A (At Ts=25 °C) and ~48 A (at Ts=70 °C). 

  • Isolation voltage between module terminals: 2500 V AC for 1 minute. 

  • Junction temperature operating range: -40 … +175 °C. 

• The module technology: “Trench 4 IGBTs” + robust free-wheeling diodes (CAL technology) + spring contacts. (For SKIIP 25AC12T4V25 variant) 

• Package: MiniSKiiP 2, 59 × 52 × 16 mm according to variants. 

⚠️ What’s uncertain / requires verification

• I could not find a full official datasheet for the exact part number “25AC12T4V1” (while similar variants like “25AC12T4V25” or “25AC126V1” have documented datasheets). So you should treat the above as indicative and verify any unlisted spec.

• Thermal resistance, switching energy, detailed dynamic parameters (Eon, Eoff, gate charge) for this variant might differ slightly from the published ones for similar modules.

• The suffix “T4V1” suggests a topology/variant difference (e.g., 4-IGBT topology, version V1) — you must ensure your circuit fits that topology (likely a 3-phase bridge inverter module)

• Ensure the module’s mounting/thermal management: being a high-power module, you need good heat-sink, proper soldering/attachment, and adhere to package’s mounting instructions.

🛠 Typical usage & design‐considerations

• This module is intended for inverter applications with up to ~15 kW motor power (similar to spec for family) based on published variant. (

• Cooling and soldering/attachment quality matter a lot to achieve the rated current (50 A) and maintain reliability. For example the IC rating declines as Ts rises.

• Since it’s rated for 1200 V, it is suitable for high-voltage DC bus (~600 V to ~800 V) in inverter systems.

• Pay attention to gate drive: The module spec says VGE allowable is ±20 V (for many variants). E.g., for SKIIP 25AC12T4V25 spec shows ±20 V. 

• Make sure the isolation voltage is observed — when mounting to chassis etc, ensure proper creepage/clearance.

• Use proper heat‐sink, apply thermal interface, manage junction temperature (Tj) within recommended limits.

• The spring contacts: care in assembly to ensure reliable electrical contacts and minimizing contact resistance.

Approx. Rs 4,750 / PieceGet Latest Price

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Here’s a detailed summary of the module SKIIP 24AC12T4V1 from Semikron / Danfoss, along with what you need to check if you plan to use it in your design.

✅ What we do know

From the datasheet:

• This is a Six-pack topology (three phase bridge) module in the MiniSKiiP® 2 package (“MiniSKiiP II 2”).

• Maximum collector-emitter off‐voltage (VCES) is 1200 V. 

• Nominal current: The datasheet gives ICnom = 35 A. 

• For 0.8 W/(mK) paste (worse thermal interface) at Tj=175 °C the module IC at Ts=25 °C is ~52 A; at Ts=70 °C ~43 A. 

• Using better paste (2.5 W/(mK)) the IC at Ts=25 °C is ~59 A; at Ts=70 °C ~48 A for the IGBT section. 

• Inverse diode also: VRRM=1200 V. IF for 0.8 W/(mK) at Ts=25 °C ~44 A; at Ts=70 °C ~35 A. 

• Isolation voltage: 2500 V AC for 1 minute. 

• Junction temperature range: -40 °C to +175 °C. 

• Features: “Trench 4 IGBTs”, “robust and soft switching free-wheeling diodes in CAL technology”, “highly reliable spring contacts for electrical connections”. 

• Typical application: Inverter up to ~22 kVA (typical motor power ~11 kW) associated with this module family. 

⚠️ Key warnings / what still needs verification

• Make sure you get the correct variant: “24AC12T4V1” suffix is specific and there are many similar modules in the “AC12T4V…” family.

• Confirm dynamic parameters (switching energies Eon, Eoff, gate charge, etc) for your exact suffix — the datasheet gives some but depending on version there may be differences. 

• Thermal management is critical: the ratings for IC assume certain paste thermal conductivity (0.8 or 2.5 W/(mK)). If your thermal interface or heatsink is worse, current capability drops.

• Mounting: since this is a spring-contact module (MiniSKiiP series) you must follow recommended mounting instructions (contact pressure, heatsink flatness, torque, etc) for reliable performance.

• Gate drive: while the IGBT allows ±20 V gate-emitter in many similar modules, always verify for your exact part. For example similar modules show VGES = -20 … +20 V. 

• If you intend very high frequency switching or very high currents, check the thermal cycling, module lifetime data, and safe operating area (SOA) from Semikron’s technical explanations.

🛠 Practical design considerations

• Since this is a 1200 V module, it’s suitable for DC-bus voltages up to ~600-700 V (depending margin) and full bridge inverter topologies for motors ~11 kW (as per datasheet family suggestion).

• Ensure the heatsink and thermal interface allow the module to operate at a low case/solder-temperature (Ts) to gain the rated current.

• Make sure the module’s layout allows for the spring contacts to be pressed properly, and the busbars, DC link capacitors, and wiring are sized for the current.

• Make sure the switching speed, gate resistance and snubber/commutation design are appropriate: dynamic stresses (dI/dt, dV/dt) can exceed datasheet limits if you push too hard.

• Make sure you pay attention to clearance/creepage and insulation because the module has 1200 V off‐voltage and isolation voltage requirement of 2500 V AC.

• If replacing an older module, confirm pin-out, mounting hole pattern, footprint (59 × 52 × 16 mm according to datasheet).

Approx. Rs 2,500 / PieceGet Latest Price

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The IXGN60N60 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by IXYS, a company known for its power semiconductor solutions. The TO-227 package is a small package typically used for high-performance and efficient power switching applications. This IGBT is commonly used in medium to high-power applications where efficiency and fast switching are critical.

Key Features of the IXGN60N60 (TO-227):

• Type: IGBT (Insulated Gate Bipolar Transistor), which combines the characteristics of both MOSFETs and BJTs, offering high efficiency and fast switching capabilities.
• Voltage Rating: 600 V (Collector-Emitter Voltage, Vce), making it suitable for medium-voltage power applications.
• Current Rating: 60 A (Continuous Collector Current, Ic), which allows it to handle significant power levels in industrial and power control applications.
• Package Type: TO-227, a small and compact package suitable for efficient thermal management in power systems.
• Fast Switching: The IXGN60N60 is optimized for fast switching, making it ideal for applications like inverters and motor drives where efficiency and high-speed operation are critical.
• Gate Drive Requirements: The IGBT requires a gate driver for proper switching and control, and its gate can be controlled with a small voltage, similar to a MOSFET.
• Thermal Performance: The TO-227 package provides good heat dissipation properties, which are essential for high-current and high-voltage operation.

Benefits:

1. High Voltage and Current Handling: With a 600 V voltage rating and 60 A current rating, the IXGN60N60 is suitable for handling significant power in medium-voltage applications, such as motor drives, inverters, and power supplies.
2. Low Power Loss: The low Vce(sat) ensures minimal conduction losses, improving the overall efficiency of the power system.
3. Fast Switching Performance: The fast switching capability of the IXGN60N60 allows for efficient operation in high-speed applications, such as pulse width modulation (PWM) circuits, DC-AC converters, and power inverters.
4. Compact Package: The TO-227 package allows for compact integration into designs while providing adequate thermal performance for medium-power applications.

Common Applications:

• Motor Drives: The IXGN60N60 is used in motor drive circuits to control the speed and torque of motors, especially in inverters for AC motors or DC motor drives.
• Power Inverters: Ideal for use in DC-AC inverters for renewable energy systems (like solar inverters) or uninterruptible power supplies (UPS), where efficient power conversion is essential.

Thermal Management:

As with any high-power device, proper thermal management is essential. The IXGN60N60 typically requires heat sinks or forced air cooling to ensure that the device does not overheat during operation, especially under high load conditions. The TO-227 package provides good thermal conductivity but may require additional cooling measures depending on the application.

Integration Considerations:

When integrating the IXGN60N60 IGBT into a power system, consider the following:

• Gate Drive Circuit: Ensure that the gate driver is appropriately selected and designed to handle the required switching speeds and voltage levels for the IXGN60N60.
• Snubber Circuit: Use a snubber circuit (such as a resistor-capacitor network) to protect the IGBT from voltage spikes that may occur during switching, especially