Igbt Transistors

Approx. Rs 375 / PieceGet Latest Price

Product BrochureProduct Details:

The K40T120T2 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for high-power applications. IGBTs are widely used in power electronics due to their ability to handle large voltages and currents while providing efficient switching performance.

Key Features of the K40T120T2:

• Voltage Rating (1200V): The "120" in the part number refers to the 1200V maximum voltage the IGBT can withstand. This makes the device suitable for high-voltage applications.
• Current Rating (40A): The "40" in the part number indicates the 40A continuous current rating. It is designed to handle up to 40 amperes of current, making it suitable for medium to high-power applications.
• Fast Switching: The K40T120T2 is optimized for fast switching, which is essential for high-efficiency motor control and power conversion applications.
• Low Saturation Voltage: IGBTs like the K40T120T2 typically have a low saturation voltage, meaning less power is lost during operation, leading to improved energy efficiency.
• Thermal Management: The device is built with thermal management in mind, as IGBTs can generate significant heat during operation. The module often includes features for efficient heat dissipation.
• High Efficiency: Designed to offer low conduction losses and high efficiency during switching, making it ideal for use in energy-critical applications.

Typical Applications:

• Motor Drives: Used in variable frequency drives (VFDs) for controlling the speed of motors in industrial machinery, pumps, and fans.
• Power Inverters: Employed in inverters used for renewable energy systems (such as solar or wind), uninterruptible power supplies (UPS), and other power conversion systems.
• Welding Machines: Utilized in welding power supplies, where high current and voltage control is needed.
• Induction Heating: Applied in induction heating systems that require high-frequency switching of large power levels.

Package:

• The K40T120T2 is typically available in a TO-220 or similar package, designed for efficient power dissipation and ease of mounting to heatsinks in high-power applications.

If you need more detailed specifications or the datasheet for the K40T120T2, feel free to ask!

Approx. Rs 5,500 / PieceGet Latest Price

Product BrochureProduct Details:

The DP15H1200TO101981 is an IGBT module manufactured by Danfoss (formerly Semikron), designed for industrial and power electronics applications. It features high-power handling capabilities and is optimized for efficient switching in demanding environments.

Key Features:

1. High Voltage Rating:
   • Maximum collector-emitter voltage (VCES_{\text{CES}}): 1200V.
2. High Current Capability:
   • Collector current (IC_{\text{C}}): 15A (continuous).
3. Dual IGBT Configuration:
   • Contains two IGBTs with an anti-parallel diode in a half-bridge configuration.
4. Low Switching Losses:
   • Optimized for high efficiency in power conversion systems.
5. High Reliability:
   • Robust construction with advanced insulation and thermal management.
6. Integrated Protection:
   • Short-circuit protection and over-temperature protection.

Applications:

• Industrial motor drives.
• Photovoltaic inverters.
• Uninterruptible Power Supplies (UPS).
• AC/DC and DC/DC converters.
• High-performance power switching systems.

Electrical Characteristics:

• Maximum Ratings:
  • Collector-Emitter Voltage (VCES_{\text{CES}}): 1200V.
  • Continuous Collector Current (IC_{\text{C}}): 15A.
  • Pulsed Collector Current (ICM_{\text{CM}}): Higher, depending on thermal and electrical conditions.
• Switching Characteristics:
  • Low switching and conduction losses for efficient operation.
• Thermal Characteristics:
  • Maximum junction temperature: 150°C.
• Diode Characteristics:
  • Anti-parallel diode for freewheeling applications.

Package:

• Comes in a TO-Module package, which is compact and thermally efficient for high-power applications.

Benefits:

• Compact module simplifies PCB design and assembly.
• High efficiency reduces overall system energy consumption.
• Long lifecycle with robust thermal and electrical characteristics.

Would you like to explore detailed datasheets, equivalent modules, or application notes for the DP15H1200TO101981?

Approx. Rs 2,500 / PieceGet Latest Price

Product BrochureProduct Details:

The 6MBI20GD060 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. Here’s a brief overview of its specifications:

Key Features:

• Model Number: 6MBI20GD060
• Manufacturer: Fuji Electric
• Configuration: Six-pack IGBT module
• Voltage Rating: 600V (maximum collector-emitter voltage)
• Current Rating: 20A (maximum continuous collector current)
• Type: IGBT module with a built-in diode
• Package: Compact module with screw terminals for ease of use and integration
• Applications:
  • Motor drives
  • UPS systems
  • Inverters
  • Power control systems
  • Industrial machinery

Advantages:

• High efficiency and switching speed.
• Compact size for space-saving designs.
• Reliable performance in high-power applications.

Let me know if you need detailed datasheets, application examples, or purchasing information!

Approx. Rs 8,000 / PieceGet Latest Price

Product BrochureProduct Details:

The 6MBP50VAA060 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. Here are its key specifications:

Specifications:

• Voltage Rating: 600V
• Current Rating: 50A
• Configuration: 6-pack (3-phase bridge)
• IGBT Type: Low saturation voltage type
• Driver Circuit: Built-in
• Protection Features:
  • Overcurrent protection (OCP)
  • Overtemperature protection (OTP)
  • Undervoltage lockout (UVLO)

Applications:

• Motor drives
• Inverters
• UPS systems
• Industrial power applications

Would you like a datasheet or additional details, such as pin configuration or circuit design tips?

Approx. Rs 450 / PieceGet Latest Price

Product BrochureProduct Details:

The IKW50N60DTP is a 600V, 50A IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, such as motor drives, inverters, and power supplies.

Key Features of IKW50N60DTP:

• Type: IGBT with soft fast recovery diode

• Voltage Rating (Vce): 600V

• Current Rating (Ic): 50A @ 100°C

• Collector-Emitter Saturation Voltage (Vce(sat)): 1.85V (typical)

• Turn-On Delay Time: 40 ns (typical)

• Turn-Off Delay Time: 120 ns (typical)

• Switching Frequency: Suitable for medium-frequency applications (~20kHz - 50kHz)

• Low Switching Losses and High Efficiency

• Package: TO-247 (Through-Hole, not SMD)

• Operating Junction Temperature (Tj): Up to 175°C

Applications:

• Motor Drives (Industrial and Consumer Applications)

• UPS (Uninterruptible Power Supplies)

• Solar Inverters and Power Factor Correction (PFC)

• Welding Equipment and Induction Heating

This IGBT is optimized for low conduction losses and fast switching, making it ideal for high-efficiency power conversion.

Would you like the datasheet or recommendations for similar IGBTs?

Approx. Rs 200 / PieceGet Latest Price

Product BrochureProduct Details:

The G4RC10S is a transistor manufactured by International Rectifier. It is a type of power transistor designed for use in applications requiring efficient switching and power management, often in motor control, power supplies, or HVAC systems.

However, I couldn't find detailed, specific information about this part number, and it might be either obsolete or a less common model. It is possible that this component could be from a series of MOSFETs or IGBTs that are often used for power conversion.

If you're looking for a specific characteristic, such as voltage rating, current handling, or datasheets, it might be helpful to check directly with International Rectifier's legacy parts or a component distributor. Would you like help with more detailed specs or alternatives for power transistors?

Approx. Rs 5,500 / PieceGet Latest Price

Product BrochureProduct Details:

The K229A04 is an IGBT (Insulated Gate Bipolar Transistor) produced by Vincotech, a company that specializes in power electronics components. The K229A04 is part of their product offerings for power control applications.

Typically, IGBT modules like the K229A04 are used in high-efficiency switching applications, including motor drives, power inverters, and other industrial power systems. The IGBT is designed to handle large amounts of current and voltage while providing efficient switching characteristics, making it ideal for energy conversion systems.

For specific technical details such as the exact voltage, current ratings, and other features of the K229A04, you would typically consult the product datasheet provided by Vincotech. This datasheet will give you in-depth information about the module's performance characteristics, recommended operating conditions, and application guidelines.

Let me know if you need more details or specific specifications!

Approx. Rs 350 / PieceGet Latest Price

Product BrochureProduct Details:

 

Here’s an image of the Infineon K40H1203 (also known as IKW40N120H3), a TO-247-3 packaged IGBT transistor.

Overview: Infineon K40H1203 (IKW40N120H3)

The K40H1203, designated as IKW40N120H3, is a third-generation Trench and Fieldstop IGBT manufactured by Infineon. It delivers high-speed switching and reliable performance across demanding applications.

Key Features

• Technology: TrenchStop™ (Trench & Fieldstop) for low on-state voltage and fast switching

• Soft, fast recovery anti-parallel diode—optimized for low EMI and reduced switching noise

• Maximum junction temperature (Tj): up to 175 °C

• JEDEC-qualified, with Pb-free lead plating and RoHS compliance

Electrical & Thermal Specifications

According to the datasheet details:

• Collector–Emitter Voltage (VCE): 1200 V

• Continuous Collector Current (IC): 40 A

• VCE(sat) at 25 °C: ~2.05 V

• Package: PG-TO247-3 (TO-247 with 3 leads)

• Power Dissipation (Pd): Up to 483 W

• Collector Pulsed Current (ICM): 160 A

• Gate Charge: ~185 nC

• Reverse Recovery Time (trr): ~355 ns

• Switching Energy: ~4.4 mJ

• Turn-on / Turn-off Delay (25 °C): ~30 ns / ~290 ns

• VCE(on) Max at 15 V, 40 A: ~2.4 V

• Operating Temperature Range: –40 °C to +175 °C

Applications & Typical Uses

This IGBT is ideal for:

• UPS (Uninterruptible Power Supplies)

• Welding power supplies

• High-frequency converters

• Other industrial high-speed switching applications

Summary at a Glance

Would you like help with circuit integration (like gate drive recommendations or datasheet resources), or comparisons with similar IGBTs? I'm happy to assist!