Mosfet

Approx. Rs 200 / PieceGet Latest Price

The STI3470 is a high-efficiency, 2A synchronous step-down (buck) converter developed by TMI (拓尔微). Designed for applications requiring efficient voltage regulation, it operates over a wide input voltage range and offers flexible output configurations.

Key Features:

• High Efficiency: Achieves up to 95% efficiency, optimizing power usage.
• Input Voltage Range: Supports 3.5V to 18V, accommodating various power sources.
• Output Current: Capable of delivering up to 2A, suitable for moderate power applications.
• Switching Frequency: Operates at 600kHz, balancing efficiency and component size.
• Operation Modes: Offers both PWM and PFM modes, ensuring high efficiency across different load conditions.
• Protections: Includes over-current protection with hiccup mode, input over-voltage protection (OVP), thermal shutdown, inrush current limit, and soft start features.
• Package: Available in a compact SOT-23-6 package, facilitating space-saving designs.

Typical Applications:

• Distributed power systems
• Digital set-top boxes
• Flat-panel televisions and monitors
• Wireless and DSL modems
• Notebook computers

For detailed electrical characteristics, application circuits, and design guidelines, please refer to the STI3470 datasheet.

When integrating the STI3470 into your design, ensure that the input voltage, output voltage, and load current requirements align with the device's specifications. Proper layout considerations, such as minimizing the length of high-current paths and placing input/output capacitors close to the IC, will enhance performance and reduce potential issues related to noise and stability.

Approx. Rs 80 / PieceGet Latest Price

The IRFR024N is a 55V single N-channel HEXFET power MOSFET originally developed by International Rectifier, now part of Infineon Technologies. This MOSFET is housed in a D-Pak (TO-252) package, making it suitable for surface-mount applications. citeturn0search1

Key Features:

• Planar Cell Structure: Provides a wide Safe Operating Area (SOA), enhancing device ruggedness.

• Low On-Resistance (R_DS(on)): Optimized for applications requiring efficient switching performance.

• Fast Switching: Suitable for applications operating below 100 kHz.

• Industry Standard Package: Facilitates ease of design and replacement.

• Product Qualification: Meets JEDEC standards, ensuring reliability and performance.

For detailed specifications and application guidelines, please refer to the IRFR024N datasheet.

Approx. Rs 250 / PieceGet Latest Price

The SPB20N60C3 is a 600V CoolMOS™ power transistor from Infineon Technologies, designed for high-efficiency applications. citeturn0search0

Key Features:

• Voltage Rating: 600V

• On-State Resistance (RDS(on)): 0.19Ω

• Continuous Drain Current (ID): 20.7A

• Gate Charge (Qg): 49.0nC

• Package: PG-TO263-3-2

Applications:

The SPB20N60C3 is suitable for various applications, including:

• Switch-mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC) circuits

• Motor control

• Industrial applications requiring high voltage and current handling

Package Details:

The transistor is housed in a PG-TO263-3-2 package, with a total weight of approximately 1564.48 mg. citeturn0search6

Considerations:

While the SPB20N60C3 offers robust performance, it's worth noting that Infineon has introduced newer technologies, such as the CoolMOS™ C6/E6 series, which provide improved efficiency and ease of use. citeturn0search2

For detailed technical specifications and performance characteristics, please refer to the official datasheet provided by Infineon Technologies. citeturn0search0

Approx. Rs 750 / PieceGet Latest Price

The AM29LV116DB is a 16 Megabit (2 M x 8-bit) CMOS flash memory device manufactured by Advanced Micro Devices (AMD), not Intel. It operates on a single 3.0V power supply and is designed for embedded systems requiring reliable, low-voltage, non-volatile memory. (AM29LV116DB-120EI Datasheet(PDF) - Advanced Micro Devices)

• Memory Organization: 2 Megabytes arranged as 2,097,152 bytes (2 M x 8-bit)

• Voltage Supply: 3.0V-only operation for read, program, and erase functions

• Boot Sector Architecture: Supports both top and bottom boot block configurations

• Erase Capabilities:

  • Sector Erase

  • Chip Erase

• Fast Access Times: Available in various speed grades, including 70ns, 90ns, and 120ns

• Package Options: Typically offered in 40-pin TSOP (Thin Small Outline Package) (

For detailed specifications, electrical characteristics, and timing diagrams, refer to the official datasheet:

• AM29LV116DB-120EI Datasheet (PDF)

If you're seeking an Intel equivalent to the AM29LV116DB, consider the Intel TE28F016C3TA90. Both devices offer similar functionalities and can be compared for compatibility in specific applications. For a detailed comparison, you can refer to the following resource: (Compare AM29LV116DB-90EC vs TE28F016C3TA90 - Findchips)

• AM29LV116DB-90EC vs TE28F016C3TA90 Feature Comparison

If you need assistance with interfacing this IC with a specific microcontroller or require further information on its application, feel free to ask!

Approx. Rs 50 / PieceGet Latest Price

The 74HC393 is a dual 4-bit binary ripple counter IC, and STMicroelectronics (ST) is one of the manufacturers that produce this part.

• Type: Dual 4-bit binary ripple counter

• Technology: High-speed CMOS (HC)

• Family: 74HCxx series

• Logic Level: CMOS/TTL compatible

• Manufacturer: STMicroelectronics (also made by Nexperia, Texas Instruments, ON Semi, etc.)

• Contains two independent 4-bit counters

• Asynchronous (ripple) counter – each flip-flop toggles on the falling edge of the previous stage

• Clock Frequency: Typically up to 50 MHz at Vcc = 5V

• Wide Supply Voltage: 2V to 6V (typically operated at 5V)

• Low Power Consumption

• Standard Logic Pinout – Easy to interface with other 74HC logic ICs

• Frequency division

• Timing circuits

• Event counting

• Digital clocks

• Frequency counters

Would you like a datasheet, timing diagram, or example circuit using the 74HC393?

Approx. Rs 150 / PieceGet Latest Price

The RFP40N10 is an N‑Channel power MOSFET originally by Fairchild Semiconductor (now part of ON Semiconductor) and later labeled under Intersil variants. Here’s a detailed overview based on its datasheet:

• Drain‑Source Voltage (VDSS): 100 V

• Continuous Drain Current: 40 A

• On-Resistance (RDS(on)): 0.040 Ω (at 25 °C) 

• Gate Threshold Voltage (VGS(th)): Approx. 2–4 V (typical around 2–4 V) Total Gate Charge (Qg): ~300 nC (0→20 V)

• Maximum Power Dissipation (PD): ~160 W (at 25 °C case) 

• Maximum Junction Temperature: 175 °C

• Package: TO‑220AB (also available in TO‑247, TO‑262, TO‑263 mounting variants) 

• Rise Time (tr): ~30 ns

• Turn‑on Delay (td(on)): ~17 ns

• Fall Time (tf): ~20 ns

• Turn‑off Delay (td(off)): ~42 ns 

These show that the RFP40N10 is well-suited for medium-frequency switching applications, such as SMPS, motor drives, and relay interfaces.

• Drain–Gate Voltage (VDGR): ±100 V

• Operating Temperature Range: –55 °C to +175 °C

• Thermal Resistance junction→case: ~0.94 °C/W

• Thermal Resistance junction→ambient: ~30 °C/W (TO‑247) 

• Internal Diode: VSD ≈ 1.5 V @ 40 A; Reverse recovery ~200 ns 

Designed using Fairchild’s MegaFET process, this MOSFET delivers low on-resistance combined with high current capability and reliable switching characteristics—ideal for:

• Switch-mode power supplies (SMPS)

• DC–DC converters

• Motor drivers

• Relay or solenoid drivers

• High-current emitter switches in bipolar transistor circuits 

• The device was marked as obsolete, and stock is limited (e.g., Mouser, RS show discontinued/obsolete status) 

• Max gate voltage is ±20 V—drive within manufacturer limits.

• When operated at high currents, careful thermal management is essential to stay within the RθJA budget.

If you need details like capacitance curves, SOA graphs, or packaging variants, I’m happy to dig deeper. Also if you're looking for modern interchangeable replacements, I can help with that too!

Approx. Rs 200 / PieceGet Latest Price

Here’s the information on the IRFR3710Z N‑channel MOSFET from IR/Infineon:

The IRFR3710Z is a high-performance MOSFET originally from International Rectifier and now produced by Infineon Technologies . It uses HEXFET® technology and comes in a D‑PAK (TO‑252) surface-mount package.

• Drain‑Source Voltage (VDSS): 100 V 

• Continuous Drain Current (ID):

  • Up to 56 A (silicon-limited),

  • 42 A (package-limited) at VGS = 10 V 

• On-Resistance (RDS(on)): max 18 mΩ at 33 A, VGS=10 V 

• Gate Threshold Voltage (VGS(th)): ~2.0 V to 4.0 V @ 250 μA gate current 

• Total Gate Charge (Qg): up to ~100 nC (@ 10 V) 

• Input Capacitance (Ciss): ~2930 pF; Coss ~290 pF; Crss ~180 pF 

• Maximum Junction Temp: up to 175 °C 

• Power Dissipation: ~140 W (Tc) with thermal derating of ~0.95 W/°C

• Avalanche Capability: Designed for repetitive avalanche use up to TJmax 

This MOSFET is optimized for automotive and general power conversion applications:

• Motor control circuits

• DC‑DC converters

• Solar inverter designs

• High-speed switching loads requiring low conduction losses and robust avalanche performance 

• IRFR3710ZTRPBF is the trade-through version available in tape-and-reel packaging for automated assembly — identical electrical performance, simply different packaging handled by Infineon (active product) .

• Cross-reference or upgraded options may include other Infineon automotive-grade HEXFETs with similar or improved ratings, depending on thermal and switching needs.

• For fast-switching designs, pay attention to the considerable gate charge (~100 nC) and capacitances when calculating drive requirements.

• The 175 °C rated junction temperature supports robust use in hot environments, but heat sinking or proper PCB layout is still essential.

• Repetitive avalanche-handling makes it suitable for inductive load switching without added snubbers in some designs.

• Check derating curves for prolonged use near 100 A pulses.

If you’d like help with gate drive circuits, layout recommendations, or suitable alternates in different packages or with lower gate charge, I’d be glad to help!

Approx. Rs 250 / PieceGet Latest Price

Here’s a clear overview of the 74LVC3G34DP integrated circuit from NXP/Nexperia:

• The 74LVC3G34 is a triple non-inverting buffer—three 1-bit buffer elements in a single package. Inputs can be driven by either 3.3 V or 5 V logic, making it ideal for mixed-voltage environments and level translation .

• Key electrical characteristics include wide supply voltage (1.65 V to 5.5 V), high noise immunity, ±24 mA output drive at VCC = 3 V, low power CMOS operation, and robust latch-up immunity (> 250 mA) .

• The device supports partial power-down operation via IOFF circuitry, which disables outputs to avoid backflow currents when unpowered .

• It meets several JEDEC voltage standards: JESD8-7, JESD8-5, JESD8C, and JESD36 .

• ESD protection: HBM > 2000 V, CDM > 1000 V 

• The 74LVC3G34DP-Q100 variant is automotive-qualified under AEC-Q100 (Grade 1), rated for -40 °C to +125 °C, and shares the same logic and packaging (TSSOP-8) 

• Standard industrial grade 74LVC3G34DP,125 (also TSSOP-8) is specified similarly for -40 °C to +125 °C 

• The DP suffix indicates the TSSOP-8 (thin shrink small-outline package) with a 3.0 mm body width (SOT505-2) 

• Packaging options include Tape & Reel (TR), Cut Tape (CT), and Digi-Reel. Pricing at DigiKey for the “,125” variant starts at around US $0.54 per piece, with volume discounts for larger quantities 

• The Q100 variant (automotive) may have longer lead times (e.g., up to 12 weeks) as indicated by some distributors 

• Description: Triple non-inverting buffer for mixed-voltage logic interfacing.

• Key specs: 1.65–5.5 V supply, 3 buffer channels, ±24 mA drive at 3 V, over-voltage tolerant inputs, low-power CMOS, ESD robust.

• Variants: Standard industrial (DP,125) and automotive-grade (DP-Q100).

• Packaging: TSSOP-8 (SOT505-2), multiple reel formats.

• Availability: In stock from major distributors; automotive variant has longer lead time.

If you'd like help choosing a substitute, deeper dive into the datasheet, footprint data, or sourcing for specific quantities, just let me know!

Approx. Rs 225 / PieceGet Latest Price

Additional Information:

• Delivery Time: READY STOCK

Approx. Rs 350 / PieceGet Latest Price

The IPB042N10N3 is a power MOSFET from Infineon Technologies, designed for high-performance switching applications, especially in automotive and industrial sectors.

• Low RDS(on) for reduced conduction losses

• High current handling

• Fast switching

• Rugged design for automotive use

• Optimized for synchronous rectification and battery management

You can find the official datasheet here:

Would you like help with equivalent parts, application circuits, or thermal management details?

Approx. Rs 150 / PieceGet Latest Price

Here’s a refined overview of the SPP20N60C3 from Infineon:

SPP20N60C3

Infineon Technologies (part of the CoolMOS™ C3 series)

• Device Type: N-channel enhancement-mode MOSFET

• Drain‑Source Voltage (VDSS): 600 V 

• Continuous Drain Current (ID): 20.7 A (at case temperature) 
  Power Dissipation: 208 W (Tc) 

• On-Resistance (RDS(on)): 0.19 Ω @ VGS=10 V, 13.1 A 

• Gate Threshold Voltage (VGS(th)): ~3.9 V 

• Total Gate Charge (Qg): 87–114 nC @ 10 V 

• Package: TO-220 (fully isolated PG‑TO220‑3‑1) 

• Rating: dv/dt-rated, periodic avalanche-capable 
  Max Junction Temperature: 150 °C 

• Low RDS(on): Industry-leading for 600 V parts in TO‑220, enabling higher efficiency and lower conduction losses Ultra-low Gate Charge: Supports faster switching with reduced gate drive losses 

• Robustness: Avalanche-rated with strong dv/dt tolerance—ideal for inductive load switching

• Power Packaging: Isolated TO‑220 package offers easy heat sinking and electrical isolation (2500 VAC rating)

• SMPS / PFC circuits

• Motor drives and inverters

• Offline power supplies

• Class-D audio amplifiers

• General high-voltage switching

For full specs, thermal characteristics, switching behavior, SOA graphs, and application circuits, refer to the official Infineon datasheet (Rev 3.x, ~2009) .

The SPP20N60C3 is a robust, high‑voltage CoolMOS™ C3 MOSFET in an isolated TO‑220 package, offering low RDS(on) and low gate charge. It’s well-suited for efficient, high-voltage switching applications. Although officially discontinued, it's still readily available and reliable for design use.

Want help finding an alternative part or sourcing specifics? Let me know!