IGBT MODULES

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Approx. Rs 7,500 / PieceGet Latest Price

The FS150R12KT3 is a IGBT module manufactured by Infineon Technologies, designed for high-performance power electronic applications. It is part of the EconoPACK™ series, which is known for compact design and high reliability in industrial and automotive applications.

1. Electrical Ratings:

   • Collector-Emitter Voltage (VCES): 1200V
   • Continuous Collector Current (IC): 150A (at 25°C)
   • Pulse Collector Current (ICP): Higher peak current capability for short durations.

2. Configuration:

   • Half-Bridge Module: Contains two IGBTs and freewheeling diodes for efficient switching and rectification.

3. Switching Technology:

   • Optimized for switching frequencies in the range of medium to high levels.
   • Features Trench-Stop™ IGBT3 technology, offering improved efficiency and reduced losses.

4. Thermal Properties:

   • High-efficiency thermal management with a direct copper baseplate.
   • Optimized for applications requiring excellent heat dissipation and cooling.

5. Package:

   • EconoPACK™ 3: Compact, robust design suitable for industrial environments.
   • Solderable pins ensure reliable electrical connections.

• Industrial motor drives
• Renewable energy inverters (e.g., solar or wind inverters)
• UPS (Uninterruptible Power Supplies)
• Power conversion systems
• Welding equipment

• High efficiency: Reduced power losses during switching and conduction.
• Compact design: Saves space in high-power density applications.
• Reliability: Robust design ensures long operational life under demanding conditions.
• Ease of Integration: Compatible with a variety of gate driver ICs and control circuits.

Would you like a datasheet or additional details on implementing this module?

Approx. Rs 1,000 / PieceGet Latest Price

The IXGH32N170 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by IXYS, a company specializing in power semiconductor solutions. This specific model is designed for high-voltage, high-current applications where efficient switching and power conversion are required.

• Type: IGBT (Insulated Gate Bipolar Transistor) with an integrated freewheeling diode (anti-parallel diode).
• Voltage Rating: 1700 V (Collector-Emitter Voltage, Vce), which means it can handle high-voltage power applications.
• Current Rating: 32 A (Continuous Collector Current, Ic), suitable for medium to high-power applications.
• Package Type: TO-3P, which is a common package for high-power semiconductors, offering excellent thermal dissipation capabilities and robust construction for reliable performance.
• Low Saturation Voltage: Designed with a low Vce(sat) (Collector-Emitter Saturation Voltage), which helps reduce conduction losses and improve overall efficiency in switching operations.
• Fast Switching: Optimized for high-speed switching, making it ideal for applications requiring efficient conversion of DC to AC and vice versa, as well as fast response times in power control.

1. High Voltage and Current Handling: With a 1700 V voltage rating and 32 A current rating, the IXGH32N170 is capable of handling substantial power levels, making it suitable for demanding industrial applications.
2. Low Power Loss: The low Vce(sat) minimizes power loss during operation, improving the overall efficiency of systems in which it is used.
3. Fast Switching Capability: Its fast switching ability enables the IXGH32N170 to be used in high-frequency power conversion systems, such as inverters, where efficiency and fast response are crucial.

• Motor Drives: Used in motor control systems such as inverter drives, which require efficient switching to control motor speed and torque.

The IXGH32N170 IGBT module, like other high-power devices, requires proper thermal management to avoid overheating during operation. The TO-3P package provides good thermal conductivity, but additional cooling mechanisms, such as heat sinks or forced air cooling, are often needed to ensure reliable operation under high-power conditions.

When integrating the IXGH32N170 IGBT into a circuit, consider the following:

• Gate Drive Circuit: Ensure that the gate drive circuit is capable of switching the IGBT efficiently and that the turn-on and turn-off times are optimized to reduce switching losses.
• Snubber Circuit: Consider using a snubber circuit to protect the IGBT from voltage spikes caused by inductive loads, which can damage the device.

A typical application for the IXGH32N170 would be in a DC-AC inverter circuit where the IGBT is used to switch the DC voltage from a source (e.g., a battery or solar panel) into an AC waveform to power a motor or AC equipment. The freewheeling diode would allow current to flow during the IGBT turn-off phase, protecting the device from reverse voltage spikes and ensuring smooth operation.

Would you like more details on the IXGH32N170 datasheet, application circuits, or specific design guidelines for integrating it into your system?

Approx. Rs 150 / PieceGet Latest Price

The 12N60C3D is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor (now part of ON Semiconductor). This device is optimized for high-efficiency power switching applications, offering excellent performance in terms of switching speed, energy efficiency, and ruggedness.

1. High Voltage Rating:
   • Rated for a maximum collector-emitter voltage (VCES_{\text{CES}}) of 600V.
2. High Current Capability:
   • Collector current (IC_{\text{C}}): 12A (continuous).
3. Low On-State Voltage:
   • Reduces conduction losses, improving efficiency.
4. High-Speed Switching:
   • Optimized for low switching losses, suitable for high-frequency applications.
5. Short-Circuit Capability:
   • Rugged design to handle overcurrent conditions.
6. Integrated Diode:
   • Features a fast recovery anti-parallel diode for efficient operation in bridge configurations.

• Motor drives.
• Inverters for solar power and uninterruptible power supplies (UPS).
• High-voltage DC-DC converters.
• Induction heating systems.
• General-purpose switching applications.

• Maximum Ratings:
  • Collector-Emitter Voltage (VCES_{\text{CES}}): 600V.
  • Continuous Collector Current (IC_{\text{C}}): 12A.
  • Pulsed Collector Current: Up to 36A.
• Thermal Characteristics:
  • Maximum junction temperature: 150°C.
• Switching Characteristics:
  • Fast switching times for reduced power loss.
• Threshold Voltage (VGE(th)_{\text{GE(th)}}): 5.5V to 6.5V.
• On-State Voltage (VCE(on)_{\text{CE(on)}}): 2.2V (typical at 12A, 25°C).

• Available in TO-220 or similar through-hole package for easy heat dissipation and integration.

• High efficiency in power conversion applications.
• Rugged design suitable for demanding industrial environments.
• Low switching and conduction losses ensure energy savings.

Would you like assistance with a datasheet, application notes, or design examples using the 12N60C3D?

Approx. Rs 2,500 / PieceGet Latest Price

The PS21997-AST is an Intelligent Power Module (IPM) developed by Mitsubishi Electric, designed to enhance the efficiency and reliability of motor control systems, particularly in inverter-driven applications. This module integrates a 3-phase IGBT inverter bridge with comprehensive drive and protection circuits, streamlining the design and implementation of motor drives.

Key Features:

• 3-Phase IGBT Inverter Bridge: Incorporates advanced IGBT technology to ensure efficient switching and reduced power losses.

• Integrated Protection Functions:

  • Short-Circuit Protection (SC): Safeguards the module against overcurrent conditions, preventing potential damage.
  • Under-Voltage (UV) Protection: Monitors voltage levels to ensure they remain within safe operating ranges.
  • Over-Temperature Protection (OT): Prevents thermal overload by monitoring the module's temperature.
  • Fault Output (FO) Signaling: Provides diagnostic feedback for system monitoring and troubleshooting.

• Built-in Bootstrap Diodes: Facilitates the driving of high-side IGBTs, simplifying the overall circuit design.

• Single Power Supply Operation: Simplifies the power requirements, making the module easier to integrate into various systems.

• 5V CMOS/TTL Compatible Inputs: Ensures compatibility with standard control logic interfaces.

Applications:

• Motor Control: Ideal for driving 3-phase motors in industrial and consumer applications, such as HVAC systems, pumps, and fans.

• Inverter Systems: Suitable for various inverter applications requiring efficient power management and control.

Technical Specifications:

• Collector-Emitter Voltage (VCES): 600V

• Collector Current (IC): 30A

• Isolation Voltage: 2500V RMS

• Package Type: Dual-In-Line Package Intelligent Power Module (DIPIPM) with insulated construction.

For detailed technical information, including electrical characteristics, thermal management, and application guidelines, please refer to the PS21997-AST datasheet. citeturn0search1

If you require further assistance with integrating the PS21997-AST into your design or have specific questions regarding its operation, feel free to ask!

Approx. Rs 9,500 / PieceGet Latest Price

The 7MBR150VR120-50 is an IGBT (Insulated Gate Bipolar Transistor) power module manufactured by Fuji Electric. It is designed for high-power applications and offers features that improve efficiency and reliability in industrial systems. Here's a quick summary of its key specifications:

• Voltage Rating:
  Maximum Collector-Emitter Voltage (Vces): 1200V

• Current Rating:
  Maximum Collector Current (Ic): 150A

• Configuration:
  Seven-pack (7-module) IGBT configuration.

• Package Type:
  Compact, durable industrial package with low inductance for efficient thermal and electrical performance.

• Switching Speed:
  Optimized for high-speed switching applications.

• Insulation Voltage:
  Base plate to terminal withstand voltage: 2500V AC (1 minute)

• Application Areas:

  • Industrial motor drives
  • UPS (Uninterruptible Power Supplies)
  • Inverters for renewable energy
  • HVAC systems
  • Traction and power conditioning equipment

1. High Reliability: Built with advanced IGBT technology for improved thermal management and electrical performance.
2. Integrated Protection: Includes protection features like built-in diodes and optimized gate drive circuits.
3. Compact Design: Ideal for applications with space constraints.
4. Thermal Management: Excellent heat dissipation capabilities due to optimized design.

If you need more detailed datasheets, wiring recommendations, or specific application guidance, I can help you locate additional resources or clarify further details.

Approx. Rs 3,500 / PieceGet Latest Price

The FP30R06W1E3 is an IGBT module manufactured by Infineon Technologies, designed for efficient power switching in industrial and commercial applications. This module belongs to Infineon's EconoPACK™ 1 family, which is known for its compact design and reliable performance.

• Collector-Emitter Voltage (VCES): 600V
• Collector Current (IC): 30A
• Gate-Emitter Voltage (VGES): ±15V (typical)
• Power Dissipation (PC): 100W (approximate, depending on conditions)
• Isolation Voltage: 2500V AC for 1 minute
• Switching Frequency: Optimized for up to 20kHz

1. Compact EconoPACK™ 1 Housing: Ensures easy integration and minimal footprint in power electronics systems.
2. Low Loss: High energy efficiency with reduced switching and conduction losses.
3. Integrated Diodes: Freewheeling diodes are included for reverse recovery protection.
4. Temperature and Reliability: Designed to handle thermal stress with an efficient thermal management system.
5. Built-in Protection: Includes short-circuit and over-temperature protection.

• Industrial Motor Drives: Efficient power control for motors.
• HVAC Systems: Reliable switching in heating, ventilation, and air conditioning systems.
• Renewable Energy Systems: Power inverters for solar and wind applications.
• Uninterruptible Power Supplies (UPS): Ensures consistent power delivery in critical systems.
• Power Conversion Systems: Includes use in DC/AC converters and inverters.

• Ease of Use: Modular design simplifies assembly and reduces installation time.
• Durability: High isolation voltage ensures robust operation in industrial settings.
• Efficiency: Low power losses improve overall system efficiency and reduce operational costs.

For more technical details, including circuit diagrams, pin layouts, and thermal characteristics, refer to the FP30R06W1E3 datasheet. If you'd like assistance with design recommendations, sourcing, or alternative module comparisons, let me know!

Approx. Rs 5,000 / PieceGet Latest Price

The 7MBR50UA120 is a high-power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It is designed for industrial applications where efficient switching and power handling are required. Below are the key specifications and features of this module:

• Maximum Collector-Emitter Voltage (VCES): 1200V
• Collector Current (IC): 50A
• Gate-Emitter Voltage (VGES): ±20V
• Collector Dissipation (PC): 250W
• Isolation Voltage: 2500VAC (1 minute)
• Switching Frequency: Suitable for applications typically operating in the 20kHz-50kHz range.

• Compact Design: The module uses an optimized layout for reduced stray inductance and improved performance.
• Low Loss: Offers high efficiency with low switching and conduction losses.
• Protection: Includes features such as a built-in control circuit and a temperature sensor for thermal monitoring.
• High Reliability: Designed for long operational life and durability in demanding industrial environments.

• Inverters and converters for industrial motor drives
• Uninterruptible Power Supplies (UPS)
• Renewable energy systems, such as solar inverters
• Welding machines and power tools

• It is provided in a compact, insulated package that ensures good thermal performance.
• Easy mounting and integration with other electronic systems.

For detailed technical information, refer to the datasheet for pin configurations, electrical characteristics, and application guidelines.

Would you like assistance with application design or sourcing this module?

Approx. Rs 6,500 / PieceGet Latest Price

The SKiiP 22NAB126V10 is a Converter-Inverter-Brake (CIB) module from Semikron Danfoss, designed for efficient power management in various industrial applications. This module integrates a three-phase rectifier bridge, a brake chopper, and a three-phase inverter within a compact MiniSKiiP® 2 housing.

Key Features:

• Integrated Design: Combines rectifier, brake chopper, and inverter functions, reducing the need for multiple discrete components.
• Compact Housing: Encased in the MiniSKiiP® 2 package, measuring 59x52x16 mm, facilitating easy integration into space-constrained designs.
• Robust Components: Utilizes IGBT 3 (Trench) technology and CAL (Controlled Axial Lifetime) diodes, ensuring high performance and reliability.
• Spring Contacts: Features highly reliable spring contacts for electrical connections, simplifying assembly and maintenance.
• UL Recognition: Certified under UL file number E63532, meeting international safety standards.

Technical Specifications:

• Collector-Emitter Voltage (VCES): 1200 V
• Nominal Collector Current (ICnom): 15 A
• Maximum Power Output: 5.5 kW
• Gate-Emitter Voltage (VGE): ±20 V
• Topology: Includes a three-phase diode bridge, IGBT three-phase bridge, boost chopper, and NTC thermistor.
• Mounting Method: Press-Fit electrical mounting.

Applications:

• Uninterruptible Power Supplies (UPS): Ensures continuous power delivery in critical systems.
• Inverters: Converts DC to AC power efficiently for various applications.
• Photovoltaic Systems: Manages power conversion in solar energy installations.

For detailed electrical characteristics and thermal properties, refer to the SKiiP 22NAB126V10 datasheet.

Please note that this product is currently listed as "Not for new designs," indicating it may be approaching obsolescence or has been replaced by newer models. It's advisable to consult with Semikron Danfoss or authorized distributors for the latest product availability and recommendations.

Approx. Rs 400 / PieceGet Latest Price

The IXGH24N60AU1 is an IGBT (Insulated Gate Bipolar Transistor) from IXYS (now part of Littelfuse). Here are its key specifications:

• Voltage Rating (Vce): 600V
• Current Rating (Ic): 48A @ 25°C, 24A @ 100°C
• Pulsed Current (Icm): 96A
• Vce(sat) (Collector-Emitter Saturation Voltage): ~2.1V
• Turn-On Delay Time: ~13ns
• Turn-Off Delay Time: ~70ns
• Gate Charge (Qg): 54nC
• Package: TO-247
• Technology: Ultra-fast Speed IGBT
• Integrated Freewheeling Diode: No

• High-frequency switching power supplies
• Motor control and inverters
• Induction heating and UPS systems

Would you like a datasheet or a comparison with other IGBTs?

Approx. Rs 450 / PieceGet Latest Price

The MB88347 from Fujitsu (now part of Infineon) is a 12-bit serial input Digital-to-Analog Converter (DAC).

• DAC Type: 12-bit serial input

• Output: Analog voltage output

• Interface: Serial data input

• Power Supply: Typically 5V operation

• Package: SMD (Surface-Mount Device)

• Applications:

  • Automotive control systems

  • Industrial automation

  • Motor control

  • Sensor interfacing

Since Fujitsu semiconductor products have been discontinued or rebranded under Infineon, would you like help finding an alternative DAC with similar specifications?

Approx. Rs 4,250 / PieceGet Latest Price

The IXA60IF1200NA is a high-performance Insulated Gate Bipolar Transistor (IGBT) module developed by IXYS, now part of Littelfuse. Designed for demanding power applications, it combines advanced XPT™ (Extreme-light Punch Through) technology with a co-packed SONIC™ fast recovery diode, making it suitable for high-frequency switching and high-voltage environments.

• Collector-Emitter Voltage (VCES): 1200 V

• Continuous Collector Current (IC): 88 A @ 25°C; 56 A @ 90°C

• Pulsed Collector Current (ICM): 150 A

• Collector-Emitter Saturation Voltage (VCE(sat)): 2.1 V @ 15 V, 50 A

• Power Dissipation: 290 W

• Gate-Emitter Voltage (VGE): ±20 V

• Switching Times:

  • Turn-on Delay: 70 ns

  • Fall Time: 100 ns

  • Reverse Recovery Time: 350 ns

• Operating Temperature Range: -40°C to +150°C

• Package: SOT-227B (minibloc)

• Mounting: Chassis, Stud Mount

• Thermal Resistance (Junction-to-Case): 0.43 K/W

• Isolation Voltage: 3000 V 

• XPT™ Technology: Provides low gate charge, reduced EMI, and robust short-circuit capability (10 µs).

• SONIC™ Diode: Ensures fast and soft reverse recovery with low forward voltage drop.

• Positive Temperature Coefficient: Facilitates easy paralleling of devices.

• High Power Density: Supports compact designs in power applications.

• Square Reverse Bias Safe Operating Area (RBSOA): Enhances reliability under hard-switching conditions. 

•  

For detailed technical information, you can refer to the official datasheet provided by IXYS:

If you require further assistance in selecting suitable alternatives or integrating this IGBT module into your design, feel free to ask!

Approx. Rs 10,000 / PieceGet Latest Price

Here are the details for the 7MBR100XRE‑120‑50 IGBT module from Fuji Electric (also often referenced as “XRE / X-series, 1200 V / 100 A”):

• Rated for 1200 V collector-emitter voltage (V_CES) in inverter mode. 

• Inverter current rating of 100 A (continuous, under specified mounting and cooling conditions). 

• Maximum junction temperature for inverter/brake 175 °C; for converter circuit 150 °C. 

• Compact PC-board mount module, RoHS compliant. 

• Package size: ~62 mm width × 122 mm length, mass ~310 g. 

• It includes a converter diode bridge and dynamic brake circuit (i.e., it’s a PIM – Power Integrated Module) rather than simply a bare IGBT. 

• Suitable for inverter drives in motor drives, AC/DC servo drive amplifiers, UPS systems. 

• Given the high ratings (1200 V / 100 A) you’ll need to make sure your cooling, PCB layout and thermal interface are well-managed (the datasheet states mounting torque, baseplate, etc). 

• Being a PCB-mount module, consider clearances, creepage, and PCB heat sinking (or external cooling fin) to maintain safe T_j and T_c.

• You can download the official datasheet from Fuji’s site. 

• Pay attention to the absolute maximum ratings: the table shows for example: I_C pulse, surge currents, thermal resistances, etc. 

• The typical V_CE(sat) values, gate-emitter thresholds, switching losses are given in the datasheet as well. 

• Verify the “XRE” suffix exactly matches your needed version (there are similar parts in the series with “XRA”, “XRE”, “XN”, etc). For example the datasheet for “7MBR100XRA-120-50” shows very similar specs. 

• Confirm cooling conditions: the ratings are under specified T_c (case temperature) and mounting conditions (e.g., with additional cooling fin and thermal grease) as per the datasheet notes. 

• Ensure proper gate driver and layout for high current switching: high di/dt, switching losses, TVS or snubber arrangements may be required depending on your inverter design.

• Check availability, authenticity (buying from trusted supplier), and whether the module has been stored properly (moisture, damage, etc) especially for modules being imported to India/Mumbai region.

If you like, I can look up the full datasheet PDF (with detailed switching characteristics, thermal resistances, SOA, etc) and I can check current market pricing / sourcing in India (Mumbai region) for you. Would you like me to do that?

Approx. Rs 6,200 / PieceGet Latest Price

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